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DFM600FXS12-A000
Fast Recovery Diode Module
DS5847-1.1 June 2007 (LN25319)
FEATURES
* * * * * * Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop Isolated Copper Base plate Dual Diodes Can be paralleled for 1200A Rating Lead Free construction
KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 600A 1200A
APPLICATIONS
* * * * * * * Chopper Diodes Boost and Buck Converters Free-wheel Circuits Snubber Circuit Resonant Converters Induction Heating Multi-level Switch Inverters Fig. 1 Circuit diagram
The DFM600FXS12-A000 is a dual 1200V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As: DFM600FXS12-A000
(See package details for further information) Note: When ordering, please use the whole part number. Fig. 2 Package Outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DFM600FXS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25 unless stated otherwise C
Symbol VRRM IF IFM I2 t Pmax Visol
Parameter Repetitive peak reverse voltage Forward current (per arm) Max. forward current I2t value fuse current rating Maximum power dissipation Isolation voltage - per module Tvj = 125 C
Test Conditions
Max. 1200 600 1200 100 2500 2500
Units V A A kA 2s W V
DC, Tcase = 75 T vj = 125 C, C Tcase =110 t p = 1ms C, VR = 0, tP = 10ms, Tvj = 125 C Tcase = 25 T vj = 125 C, C Commoned terminals to base plate. AC RMS, 1 min, 50Hz
THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 32mm 20mm 175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation - junction to case
-
-
40
C/kW
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm (with mounting grease) Mounting - M6 Electrical connections - M8
-
-
8
C/kW
Tj Tstg -
Junction temperature Storage temperature range Screw torque
-40 -
-
125 125 5 10
C C Nm Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS - PER ARM Tcase = 25 unless stated otherwise. C
Symbol IRM VF Parameter Peak reverse current Forward voltage Test Conditions VR = 1200V, Tvj = 125 C IF = 600A IF = 600A, Tvj = 125 C LM Inductance Min. Typ. 1.9 2.1 20 Max. 15 2.2 2.4 Units mA V V nH
STATIC ELECTRICAL CHARACTERISTICS Tcase = 25 unless stated otherwise. C
Symbol LM Parameter Module Inductance (externally connected in parallel) Test Conditions Min. Typ. 15 Max. Units nH
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM Tcase = 25 unless stated otherwise. C
Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions Min. Typ. 400 100 40 Max. Units A C mJ
IF = 600A, dIF/dt = 4500A/s, VR = 600V
Tcase = 125 unless stated otherwise. C
Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions Min. Typ. 475 150 70 Max. Units A C mJ
IF = 600A, dIF/dt = 4200A/s, VR = 600V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
TYPICAL CHARACTERISTICS - PER ARM
Fig.3 Diode typical forward characteristics
Fig.4 Transient thermal impedance
Fig.5 Power dissipation
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
Fig.7 RBSOA
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1600g Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500
(c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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